Small-signal and noise GaAs pHEMT modeling for low noise amplifier design
Статья в журнале
Small-signal and noise GaAs pHEMT modeling techniques that include analytical extraction followed by optimization are demonstrated. The following measurement processing steps were carried out before the parameter extraction: de-embedding, data smoothing and selecting the bias mode appropriate for the extraction of parasitic resistances and inductances. A low-noise amplifier operating in 5G frequency band was designed using the resulting model. A comparison between simulation and measurements of noise factor and S-parameters of the obtained low-noise amplifier is presented.
Журнал:
- Journal of Physics: Conference Series
- IOP Publishing (Bristol)
Библиографическая запись: Small-signal and noise GaAs pHEMT modeling for low noise amplifier design / A. A. Popov [et. al.] // Journal of Physics: Conference Series. – 2020. – Vol. 1499. – No. 11. – P. 012033. – DOI: 10.1088/1742-6596/1499/1/012033
Ключевые слова:
EXTRACTION GALLIUM ARSENIDE III-V SEMICONDUCTORS PARAMETER ESTIMATION SCATTERING PARAMETERSИндексируется в:
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