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Small-signal and noise GaAs pHEMT modeling for low noise amplifier design

Статья в журнале

Small-signal and noise GaAs pHEMT modeling techniques that include analytical extraction followed by optimization are demonstrated. The following measurement processing steps were carried out before the parameter extraction: de-embedding, data smoothing and selecting the bias mode appropriate for the extraction of parasitic resistances and inductances. A low-noise amplifier operating in 5G frequency band was designed using the resulting model. A comparison between simulation and measurements of noise factor and S-parameters of the obtained low-noise amplifier is presented.

Журнал:

  • Journal of Physics: Conference Series
  • IOP Publishing (Bristol)

Библиографическая запись: Small-signal and noise GaAs pHEMT modeling for low noise amplifier design / A. A. Popov [et. al.] // Journal of Physics: Conference Series. – 2020. – Vol. 1499. – No. 11. – P. 012033. – DOI: 10.1088/1742-6596/1499/1/012033

Индексируется в:

Год издания:  2020
Страницы:  1 - 6
Язык:  Английский
DOI:  10.1088/1742-6596/1499/1/012033