Development of a 0.15 μm GaAs pHEMT process design kit for low‐noise applications

Статья в журнале

This work presents a process design kit (PDK) for a 0.15 μm GaAs pHEMT process for low‐noise MMIC applications developed for AWR Microwave Office (MWO). A complete set of basic elements is proposed, such as TaN thin film resistors and mesa‐resistors, capacitors, inductors, and transistors. The developed PDK can be used in technology transfer or education.

Журнал:

• Electronics
• MDPI (Basel)
• Индексируется в Scopus

Библиографическая запись: Development of a 0.15 μm GaAs pHEMT Process Design Kit for Low-Noise Applications [Electronic resource] / Dobush I.M. [et al.] // Electronics. –2021. – Vol. 10. – Iss. 22. – P. 2775. – DOI: 10.3390/electronics10222775

Индексируется в:

• Scopus ( https://www.scopus.com/record/display.uri?eid=2-s2.0-85118860582&origin=resultslist )