Automatic Large-Signal GaAs HEMT Modeling for Power Amplifier Design

Статья в журнале

In this paper, a new nonlinear transistor modeling technique for gallium arsenide high-electron mobility transistor (GaAs HEMT) is proposed. The technique includes an analytical extraction, enhanced by applying nonlinear least squares regression and modified-median method, and a multistage optimization, allowing completely automatic large-signal modeling. Convergence of the technique is proved by a threefold model building procedure followed by the comparison of simulated data like IV-curve and load-pull contours. A 0.15 μm GaAs pHEMT nonlinear model was built and verified with measured IV-curve, multiple bias S-parameters and power characteristics. A good agreement with the measured data proves that the proposed technique enables automatic nonlinear transistor modeling for power MMIC amplifier design.

Журнал:

• AEU - International Journal of Electronics and Communications
• Elsevier GmbH (Amsterdam)
• Индексируется в Scopus

Библиографическая запись: Automatic Large-Signal GaAs HEMT Modeling for Power Amplifier Design / A. A. Popov [et. al.] // AEU - International Journal of Electronics and Communications. – 2019. – Vol. 100. – P. 138–143. – DOI: 10.1016/j.aeue.2019.01.008

Индексируется в:

• Scopus ( https://www.scopus.com/record/display.uri?eid=2-s2.0-85060084121&origin=resultslist&sort=plf-f&src=s&sid=1dcfc39748cfebd9c9d15e500fa34d07&sot=autdocs&sdt=autdocs&sl=18&s=AU-ID%2857205462534%29&relpos=0&citeCnt=0&searchTerm= )