Investigation of memristor effect on basis of thin-film oxide dielectrics modified by carbon

Статья в сборнике трудов конференции

The regularities of the change of electrophysical properties of memristor structures based on porous films of titanium dioxide are considered at their modification by carbon. It is shown that the introduction of impurity results in the significant change of the electrophysical properties of memristor structures based on porous films of titanium dioxide. The purpose of this paper is to reveal the regularities between the electrophysical properties of elements of non-volatile memristor memory and the phenomena of switching and memory at atmospheric pressure.

Библиографическая запись: Sakharov, Yu. V. Investigation of memristor effect on basis of thin-film oxide dielectrics modified by carbon / Yu.V. Sakharov // 2nd International Telecommunication Conference on Advanced Micro- and Nanoelectronic Systems and Technologies (AMNST 2017): IOP Conference Series: Materials Science and Engineering. - 2019. - Vol. 498. - Iss. 1. - P. 012022. - DOI: 10.1088/1757-899X/498/1/012029

Ключевые слова:

MEMRISTOR CARBON THIN FILMS OXIDE DIELECTRICS

Конференция:

2nd International Telecommunication Conference on Advanced Micro- and Nanoelectronic Systems and Technologies, AMNST 2017
Россия, Московская область, Москва, 1-02 июня 2017,
Зарубежная

Издательство:

National Research Nuclear University MEPhI (Moscow Engineering Physics Institute), Moscow, Russian Federation

Россия, Московская область, Москва

Автор: Сахаров Ю. В.

Год издания: 2019

Страницы: 1 - 4

Язык: Английский

DOI: 10.1088/1757-899X/498/1/012029

Индексируется в Scopus