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Software Module for Determining Parameters of a Bipolar Transistor SPICE-Model Using Static Volt-Ampere Characteristics

Статья в сборнике трудов конференции

A software module was developed to calculate the main parameters of the SPICE-model of a bipolar transistor based on its static volt-ampere characteristics. This software module is based on the Gummel-Poon model. To build a SPICE-model of bipolar transistors, its functionality includes graphic representation of static volt-ampere characteristics, as well as calculation and output of basic parameters of the Gummel-Poon model (saturation current, non-ideality coefficient in forward connection, base current amplification factor in forward connection, forward Earlie voltage, base resistance and collector resistance). The advantages of the developed software module are: the ability to obtain the basic parameters to build a SPICE-model of bipolar transistors with a minimum set of input data; convenient data input; graphical display of volt-ampere characteristics of the studied bipolar transistor. The disadvantages include a significant error in the calculation of saturation current, base resistance and collector resistance, but it does not have a significant impact on the characteristics of the SPICE-model. We propose a way to automate measurements of static volt-ampere characteristics of bipolar transistors using a simple device built on field-effect transistors, controlled by a microcontroller.

Библиографическая запись: Tretyakov, T. I. Software Module for Determining Parameters of a Bipolar Transistor SPICE-Model Using Static Volt-Ampere Characteristics [Electronic resource] / T. I. Tretyakov, I. I. Nikolayev, A. A. Drozdova // Proceedings of the 2023 IEEE 24th International Conference of Young Professionals in Electron Devices and Materials (EDM) (Novosibirsk, Russian Federation, 29 June 2023 - 03 July 2023). – New York City : IEEE, 2022. – P. 490-494. – DOI: 10.1109/EDM58354.2023.10225154

Конференция:

  • 2023 IEEE 24th International Conference of Young Professionals in Electron Devices and Materials (EDM)
  • Россия, Новосибирская область, Новосибирск, 29 июня-03 июля 2023,
  • Международная

Издательство:

IEEE

США, New York, New York City

Год издания:  2023
Страницы:  490 - 494
Язык:  Английский
DOI:  10.1109/EDM58354.2023.10225154