Local ion-plasma etching of dielectrics initiated and controlled by the electron beam in fore-vacuum pressure range
Статья в журнале
Etching of quartz sample by the flow of energetic ions from the beam plasma produced by continuous electron beam injected in a dielectric cavity in argon in medium vacuum (2.7 Pa) was demonstrated. The energy of bombarding ions was adjusted by the voltage drop on a sheath between a plasma boundary and the cavity bottom charging by the electron beam, so the beam was the only source of generating ions and adjusting their energy. It was found that the etching rate grows with the electron beam energy following the increase in the absolute value of the near-bottom voltage drop.
Журнал:
- Vacuum
- Elsevier Science Publishing Company, Inc. (Amsterdam)
- Индексируется в Scopus, Web of Science
Библиографическая запись: Local ion-plasma etching of dielectrics initiated and controlled by the electron beam in fore-vacuum pressure range / A. V. Tyunkov [et al.] // Vacuum. – 2020. – Vol. 180. – P. 109573. – DOI: 10.1016/j.vacuum.2020.109573
Ключевые слова:
DIELECTRICS ETCHING BEAM-PRODUCED PLASMA PLASMA-CATHODE ELECTRON SOURCE MEDIUM VACUUMИндексируется в: